- Abstract:
-
Heterophase homojunction formation in atomically thin 2D layers is of great importance for next-generation nanoelectronics and optoelectronics applications. Technologically challenging, controllable transformation between the semiconducting and metallic phases of transition metal chalcogenides is of particular importance. Here, we demonstrate that controlled laser irradiation can be used to directly ablate PdSe2 thin films using high power or trigger the local transformation of PdSe2 into a m...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Publisher:
- American Chemical Society Publisher's website
- Journal:
- ACS Nano Journal website
- Volume:
- 13
- Issue:
- 12
- Pages:
- 14162-14171
- Place of publication:
- United States
- Publication date:
- 2019-12-13
- Acceptance date:
- 2019-12-11
- DOI:
- EISSN:
-
1936-086X
- ISSN:
-
1936-0851
- Pmid:
-
31833365
- Pubs id:
-
1077877
- Local pid:
- pubs:1077877
- Language:
- English
- Keywords:
- Format:
- Print-Electronic
- Copyright holder:
- American Chemical Society
- Copyright date:
- 2019
- Rights statement:
- © 2019 American Chemical Society.
- Notes:
- This is the accepted manuscript version of the article. The final version is available online from the American Chemical Society at: https://doi.org/10.1021/acsnano.9b06892
Journal article
Direct laser patterning and phase transformation of 2D PdSe2 films for on-demand device fabrication
Actions
Authors
Bibliographic Details
Item Description
Terms of use
Metrics
Altmetrics
Dimensions
If you are the owner of this record, you can report an update to it here: Report update to this record