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Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2

Abstract:

Cd3As2 is a candidate three-dimensional Dirac semi-metal which has exceedingly high mobility and non-saturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5K to 300K. We find the non-saturating linear magnetoresistance persist up to 65T and it is likely caused by disorder effects as it scales with the high mobility, rath...

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Narayanan, A More by this author
Watson, MD More by this author
Prabhakaran, D More by this author
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Publication date:
2014-12-12
URN:
uuid:4297c125-2098-4d43-8036-5da25831a137
Source identifiers:
502413
Local pid:
pubs:502413

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