Journal article icon

Journal article

Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2

Abstract:

Cd3As2 is a candidate three-dimensional Dirac semi-metal which has exceedingly high mobility and non-saturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5K to 300K. We find the non-saturating linear magnetoresistance persist up to 65T and it is likely caused by disorder effects as it scales with the high mobility, rath...

Expand abstract

Actions


Authors


Expand authors...
Publication date:
2014-12-12
URN:
uuid:4297c125-2098-4d43-8036-5da25831a137
Source identifiers:
502413
Local pid:
pubs:502413

Terms of use


Metrics


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP