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The behavior and transport of hydrogen in silicon solar cells observed through changes in contact resistance

Abstract:

This paper presents a simple method of studying the transport of hydrogen in crystalline silicon, as well as its release from bound forms during annealing at temperatures between 350-450°C. This technique is based upon observations of an increase in the contact resistance of industrial solar cells, which displays the reversibility and dependence upon electric field commonly associated with hydrogen. It is shown that the increase in contact resistance depends st...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1109/PVSC.2018.8547880

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Oxford college:
Mansfield
Role:
Author
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Publisher:
IEEE Publisher's website
Pages:
1682-1686
Publication date:
2018-11-29
Acceptance date:
2018-03-01
DOI:
EISBN:
978-1-5386-8529-7
ISSN:
0160-8371
Pubs id:
pubs:971416
URN:
uri:3ff920d7-b4f0-41c7-a177-abe3d4a9cba8
UUID:
uuid:3ff920d7-b4f0-41c7-a177-abe3d4a9cba8
Local pid:
pubs:971416
ISBN:
978-1-5386-8530-3
Keywords:

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