Journal article icon

Journal article

Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition

Abstract:

Atmospheric-pressure chemical vapor deposition (CVD) is used to grow monolayer MoS2 two-dimensional crystals at elevated temperatures on silicon substrates with a 300 nm oxide layer. Our CVD reaction is hydrogen free, with the sulfur precursor placed in a furnace separate from the MoO3 precursor to individually control their heating profiles and provide greater flexibility in the growth recipe. We intentionally establish a sharp gradient of MoO3 precursor concentration on the growth substrate...

Expand abstract
Publication status:
Published

Actions


Access Document


Publisher copy:
10.1021/cm5025662

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Publisher:
American Chemical Society
Journal:
CHEMISTRY OF MATERIALS
Volume:
26
Issue:
22
Pages:
6371-6379
Publication date:
2014-11-25
DOI:
EISSN:
1520-5002
ISSN:
0897-4756
Language:
English
Pubs id:
pubs:492742
UUID:
uuid:3f7e5032-385f-4bcb-b15a-8147775471b3
Local pid:
pubs:492742
Source identifiers:
492742
Deposit date:
2014-12-19

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP