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High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

Abstract:

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by con...

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Publication status:
Published

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Publisher copy:
10.1039/c3nr06690h

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Publisher:
Royal Society of Chemistry
Journal:
Nanoscale
Volume:
6
Issue:
10
Pages:
5479-5483
Publication date:
2014-05-05
DOI:
EISSN:
2040-3372
ISSN:
2040-3364
URN:
uuid:3f1b1c54-12e7-4ae5-8d2b-5ac2fce9246e
Source identifiers:
464707
Local pid:
pubs:464707
Language:
English

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