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Si and C delta-doping for device applications

Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Host title:
JOURNAL OF CRYSTAL GROWTH
Volume:
195
Issue:
1-4
Pages:
54-57
Publication date:
1998-12-01
DOI:
ISSN:
0022-0248
Keywords:
Pubs id:
pubs:2867
UUID:
uuid:3ee208b2-8d7c-411a-9ef6-7a566517680c
Local pid:
pubs:2867
Source identifiers:
2867
Deposit date:
2012-12-19

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