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A room temperature cathodoluminescence study of dislocations in silicon

Abstract:

Cathodoluminescence has been used to investigate room-temperature light emission from dislocations generated by ion-implantation and abrasion using silicon carbide paper in standard Czochralski grown silicon wafers. Dislocations in the ion implanted material were generated by implantation of either boron or silicon ions to produce, after suitable thermal annealing, a thin (100 - 200 nm) band of dislocation loops typically 150 nm below the surface. Abrasion created large dislocation tangles up...

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Publication status:
Published

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Volume:
179
Issue:
179
Pages:
67-70
Publication date:
2004-01-01
ISSN:
0951-3248
URN:
uuid:3de59347-935f-4c91-a585-eaf7ef144f8b
Source identifiers:
18103
Local pid:
pubs:18103
ISBN:
0-7503-0967-9

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