Conference item
A room temperature cathodoluminescence study of dislocations in silicon
- Abstract:
-
Cathodoluminescence has been used to investigate room-temperature light emission from dislocations generated by ion-implantation and abrasion using silicon carbide paper in standard Czochralski grown silicon wafers. Dislocations in the ion implanted material were generated by implantation of either boron or silicon ions to produce, after suitable thermal annealing, a thin (100 - 200 nm) band of dislocation loops typically 150 nm below the surface. Abrasion created large dislocation tangles up...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- ELECTRON MICROSCOPY AND ANALYSIS 2003
- Volume:
- 179
- Issue:
- 179
- Pages:
- 67-70
- Publication date:
- 2004-01-01
- Event title:
- Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003)
- ISSN:
-
0951-3248
- Source identifiers:
-
18103
- ISBN:
- 0750309679
Item Description
- Keywords:
- Pubs id:
-
pubs:18103
- UUID:
-
uuid:3de59347-935f-4c91-a585-eaf7ef144f8b
- Local pid:
- pubs:18103
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2004
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