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N-TYPE DOPING OF SNO2 THIN-FILMS BY SB ION-IMPLANTATION

Abstract:

The effects of Sb implantation into textured thin films of SnO2 prepared by RF sputtering have been characterised by a range of techniques including secondary ion mass spectrometry (SIMS), X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS), infrared reflectance, X-ray diffraction and conductivity measurements. The depth distribution of implanted 121Sb ions at low dose is characterised by a truncated bell-shaped distribution, with mean implantation ranges of 250 Å for 90 KeV impl...

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Publication status:
Published

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Publisher copy:
10.1039/jm9920200511

Authors


RASTOMJEE, C More by this author
GEORGIADIS, G More by this author
Journal:
JOURNAL OF MATERIALS CHEMISTRY
Volume:
2
Issue:
5
Pages:
511-520
Publication date:
1992-05-05
DOI:
EISSN:
1364-5501
ISSN:
0959-9428
URN:
uuid:3d769c11-d86b-4f50-8840-6d262bfdd11e
Source identifiers:
43931
Local pid:
pubs:43931
Language:
English
Keywords:

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