RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.

Grovenor, CRM; Cerezo, A; Smith, GDW

Abstract:

Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The composition of the Si/thermal oxide interface, and of native oxide layers, has also been investigated, showing that the native oxide is stoichiometric SiO and that an intermediate SiO layer exists at the Si/thermal oxide interface.

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APA Style

Grovenor, C. R. M., Cerezo, A., & Smith, G. D. W. (1985). RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS. Institute of Physics Conference Series, 76, 423–428.

MLA Style

Grovenor, C. RM, et al. “RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.” Institute of Physics Conference Series, no. 76, Institute of Physics Conference Series, 1985, pp. 423–28.

Chicago Style

Grovenor, CRM, A Cerezo, and GDW Smith. 1985. “RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.” Institute of Physics Conference Series, no. 76: 423–28.
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Authors

+ Grovenor, CRM More by this author

Institution:

University of Oxford

Department:

Oxford, MPLS, Materials

Cerezo, A More by this author

Smith, GDW More by this author

Bibliographic Details

Journal:: Institute of Physics Conference Series
Issue:: 76
Pages:: 423-428
Publication date:: 1985
ISSN:: 0373-0751
URN:: uuid:3c61cdd1-6c5b-47eb-999b-1a1ae2fa2c1c
Source identifiers:: 410852
Local pid:: pubs:410852

Item Description

Language:: English

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License:: Terms and Conditions of Use for Oxford University Research Archive

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