Journal article
RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.
- Abstract:
- Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The composition of the Si/thermal oxide interface, and of native oxide layers, has also been investigated, showing that the native oxide is stoichiometric SiO and that an intermediate SiO layer exists at the Si/thermal oxide interface.
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Bibliographic Details
- Journal:
- Institute of Physics Conference Series
- Issue:
- 76
- Pages:
- 423-428
- Publication date:
- 1985-01-01
- ISSN:
-
0373-0751
- URN:
-
uuid:3c61cdd1-6c5b-47eb-999b-1a1ae2fa2c1c
- Source identifiers:
-
410852
- Local pid:
- pubs:410852
Item Description
- Language:
- English
Terms of use
- Copyright date:
- 1985
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