Abstract:

Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The composition of the Si/thermal oxide interface, and of native oxide layers, has also been investigated, showing that the native oxide is stoichiometric SiO and that an intermediate SiO layer exists at the Si/thermal oxide interface.

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