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RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.

Abstract:
Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The composition of the Si/thermal oxide interface, and of native oxide layers, has also been investigated, showing that the native oxide is stoichiometric SiO and that an intermediate SiO layer exists at the Si/thermal oxide interface.

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Institute of Physics Conference Series
Issue:
76
Pages:
423-428
Publication date:
1985-01-01
ISSN:
0373-0751
Source identifiers:
410852
Language:
English
Pubs id:
pubs:410852
UUID:
uuid:3c61cdd1-6c5b-47eb-999b-1a1ae2fa2c1c
Local pid:
pubs:410852
Deposit date:
2013-11-17

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