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The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown

Abstract:

We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though still smaller than those reported for single-carrier type systems, The channel width dependence shows two regimes of behaviour. States with larger critical cur-rents ( > 5 muA) have linear widt...

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Publication status:
Published

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Authors


Takashina, K More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Kardynal, B More by this author
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Volume:
12
Issue:
1-4
Pages:
161-164
Publication date:
2002-01-05
DOI:
ISSN:
1386-9477
URN:
uuid:3c23e3fc-c1b7-4ac8-9b9f-6df8aa0add53
Source identifiers:
24696
Local pid:
pubs:24696

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