Conference item
The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown
- Abstract:
-
We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though still smaller than those reported for single-carrier type systems, The channel width dependence shows two regimes of behaviour. States with larger critical cur-rents ( > 5 muA) have linear widt...
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- Publication status:
- Published
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- Publisher copy:
- 10.1016/S1386-9477(01)00292-2
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Bibliographic Details
- Journal:
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS and NANOSTRUCTURES
- Volume:
- 12
- Issue:
- 1-4
- Pages:
- 161-164
- Publication date:
- 2002-01-01
- Event title:
- 14th International Conference on the Electronic Properties of Two-Dimensional Systems
- DOI:
- ISSN:
-
1386-9477
- Source identifiers:
-
24696
Item Description
- Keywords:
- Pubs id:
-
pubs:24696
- UUID:
-
uuid:3c23e3fc-c1b7-4ac8-9b9f-6df8aa0add53
- Local pid:
- pubs:24696
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2002
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