Conference item icon

Conference item

The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown

Abstract:

We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though still smaller than those reported for single-carrier type systems, The channel width dependence shows two regimes of behaviour. States with larger critical cur-rents ( > 5 muA) have linear widt...

Expand abstract
Publication status:
Published

Actions


Access Document


Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Expand authors...
Journal:
PHYSICA E-LOW-DIMENSIONAL SYSTEMS and NANOSTRUCTURES
Volume:
12
Issue:
1-4
Pages:
161-164
Publication date:
2002-01-01
Event title:
14th International Conference on the Electronic Properties of Two-Dimensional Systems
DOI:
ISSN:
1386-9477
Source identifiers:
24696
Keywords:
Pubs id:
pubs:24696
UUID:
uuid:3c23e3fc-c1b7-4ac8-9b9f-6df8aa0add53
Local pid:
pubs:24696
Deposit date:
2012-12-19

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP