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Application of TEM to the development of information storage materials

Abstract:

One of the most spectacular examples of nanomagnetic systems is that of devices based on the giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) phenomena. The device response depends critically oil parameters such as layer thickness and chemical abruptness of the interfaces between layers.. which are nanometre-scale in thickness. We have used high resolution electron microscopy (HREM) and TEM chemical mapping to understand the microstructural origins of the magnetic and transport...

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Publication status:
Published

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Publisher copy:
10.1016/j.tsf.2005.10.010

Authors


Petford-Long, AK More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Bromwich, T More by this author
Jackson, V More by this author
Castano, F More by this author
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Volume:
505
Issue:
1-2
Pages:
10-15
Publication date:
2006-05-18
DOI:
ISSN:
0040-6090
URN:
uuid:3b4db23f-c839-432c-b564-f976315c8037
Source identifiers:
29040
Local pid:
pubs:29040

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