Conference item
Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
- Abstract:
-
The growth of diamond on Si(100) surfaces using a chemical beam epitaxy approach has been investigated. It is shown that diamond can be grown using atomic H and methyl molecular beams at temperatures down to 700°C using H: CH3 flux ratios of approximately 10:1. The deposits produced are polycrystalline in nature and the maximum growth rates observed (approximately 0.1 μm h-1) using these precursors is approximately ten times larger than when acetylene is substituted for methyl. Mechanistic st...
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- Publication status:
- Published
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Bibliographic Details
- Host title:
- JOURNAL OF CRYSTAL GROWTH
- Volume:
- 164
- Issue:
- 1-4
- Pages:
- 208-213
- Publication date:
- 1996-07-01
- DOI:
- ISSN:
-
0022-0248
Item Description
- Pubs id:
-
pubs:45209
- UUID:
-
uuid:3b4bdec0-134c-4688-8044-d3e328133bdf
- Local pid:
-
pubs:45209
- Source identifiers:
-
45209
- Deposit date:
-
2012-12-19
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- Copyright date:
- 1996
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