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Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors

Abstract:

The growth of diamond on Si(100) surfaces using a chemical beam epitaxy approach has been investigated. It is shown that diamond can be grown using atomic H and methyl molecular beams at temperatures down to 700°C using H: CH3 flux ratios of approximately 10:1. The deposits produced are polycrystalline in nature and the maximum growth rates observed (approximately 0.1 μm h-1) using these precursors is approximately ten times larger than when acetylene is substituted for methyl. Mechanistic st...

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Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Volume:
164
Issue:
1-4
Pages:
208-213
Host title:
JOURNAL OF CRYSTAL GROWTH
Publication date:
1996-07-01
DOI:
ISSN:
0022-0248
Source identifiers:
45209
Pubs id:
pubs:45209
UUID:
uuid:3b4bdec0-134c-4688-8044-d3e328133bdf
Local pid:
pubs:45209
Deposit date:
2012-12-19

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