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Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors

Abstract:

The growth of diamond on Si(100) surfaces using a chemical beam epitaxy approach has been investigated. It is shown that diamond can be grown using atomic H and methyl molecular beams at temperatures down to 700°C using H: CH3 flux ratios of approximately 10:1. The deposits produced are polycrystalline in nature and the maximum growth rates observed (approximately 0.1 μm h-1) using these precursors is approximately ten times larger than when acetylene is substituted for methyl. Mechanistic st...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Jackman, RB More by this author
Davies, GJ More by this author
Volume:
164
Issue:
1-4
Pages:
208-213
Publication date:
1996-07-05
DOI:
ISSN:
0022-0248
URN:
uuid:3b4bdec0-134c-4688-8044-d3e328133bdf
Source identifiers:
45209
Local pid:
pubs:45209

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