Conference icon

Conference

Broadband terahertz emission from ion-implanted semiconductors

Abstract:
The terahertz radiation emitted from Fe+ ion-implanted InGaAs surface emitters and InP photoconductive switches was measured. We experimentally observe an increase in the spectral width of terahertz radiation at greater ion damage, which we attribute to the ultrafast capture of photoexcited carriers. Results from a three-dimensional carrier dynamics simulation support this explanation.
Publication status:
Published

Actions


Authors


Expand authors...
Volume:
110
Pages:
77-80
Publication date:
2006-01-01
ISSN:
0930-8989
URN:
uuid:3aceb072-2c62-479d-ad88-a3bcaf7a48b8
Source identifiers:
29297
Local pid:
pubs:29297
ISBN:
3-540-36587-7

Terms of use


Metrics


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP