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Broadband terahertz emission from ion-implanted semiconductors

Abstract:
The terahertz radiation emitted from Fe+ ion-implanted InGaAs surface emitters and InP photoconductive switches was measured. We experimentally observe an increase in the spectral width of terahertz radiation at greater ion damage, which we attribute to the ultrafast capture of photoexcited carriers. Results from a three-dimensional carrier dynamics simulation support this explanation.
Publication status:
Published

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Journal:
Nonequilibrium Carrier Dynamics in Semiconductors Proceedings
Volume:
110
Pages:
77-80
Publication date:
2006-01-01
Event title:
14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors
ISSN:
0930-8989
Source identifiers:
29297
ISBN:
3540365877
Pubs id:
pubs:29297
UUID:
uuid:3aceb072-2c62-479d-ad88-a3bcaf7a48b8
Local pid:
pubs:29297
Deposit date:
2012-12-19

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