Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
- Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced `cut-off' at ELO is observed for up to approximately 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effects are also pronounced, and strongly influence the dynamics.
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