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Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects

Abstract:
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced `cut-off' at ELO is observed for up to approximately 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effects are also pronounced, and strongly influence the dynamics.

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Authors


O'Sullivan, ED More by this author
Taylor, RA More by this author
Roberts, V More by this author
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Publisher:
Elsevier Science Publishers B.V.
Journal:
Physica B: Condensed Matter
Volume:
272
Issue:
1-4
Pages:
402-405
Publication date:
1999-12-01
DOI:
ISSN:
0921-4526
URN:
uuid:3a8bab50-9945-4ebb-86c1-e5c878f650b1
Source identifiers:
134678
Local pid:
pubs:134678
Language:
English

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