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REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

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APA Style

Foord, J., French, C., Levoguer, C., & Davies, G. (1993). REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 344(1673), 507–520.

MLA Style

Foord, J., et al. “REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY.” PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, vol. 344, no. 1673, 1993, pp. 507–20.

Chicago Style

Foord, J, C French, C Levoguer, and G Davies. 1993. “REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY.” PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES 344 (1673): 507–20.
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Publisher copy:: 10.1098/rsta.1993.0104

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+ Foord, J More by this author

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+ French, C More by this author

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+ Levoguer, C More by this author

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+ Davies, G More by this author

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Bibliographic Details

Journal:: PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
Volume:: 344
Issue:: 1673
Pages:: 507-520
Publication date:: 1993-09-15
DOI:: 10.1098/rsta.1993.0104
EISSN:: 1471-2962
ISSN:: 0962-8428

Item Description

Pubs id:: pubs:44271
UUID:: uuid:3a59404b-e31c-45f5-879c-b02d841c6350
Local pid:: pubs:44271
Source identifiers:: 44271
Deposit date:: 2012-12-19

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Copyright date:: 1993

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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