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Journal article

The segregation behaviour of oxygen at dislocations in silicon

Abstract:: The interaction between dislocations and oxygen atoms in silicon has been studied. The effect of immobilization of dislocations by the segregation of oxygen to the dislocation core (dislocation locking) has been investigated in the temperature range 400-800 °C and for different oxygen concentrations. It has been revealed that oxygen locking of dislocations shows three different regimes of behaviour. The experimental data have been used to determine the dislocation-oxygen interaction energy.

Publication status:: Published

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APA Style

Senkader, S., Wilshaw, P., Gambaro, D., & Falster, R. (1999). The segregation behaviour of oxygen at dislocations in silicon. SOLID STATE PHENOMENA, 70, 321–326.

MLA Style

Senkader, S., et al. “The Segregation Behaviour of Oxygen at Dislocations in Silicon.” SOLID STATE PHENOMENA, vol. 70, Scitec Publications Ltd., 1999, pp. 321–26.

Chicago Style

Senkader, S, P Wilshaw, D Gambaro, and R Falster. 1999. “The Segregation Behaviour of Oxygen at Dislocations in Silicon.” SOLID STATE PHENOMENA 70: 321–26.
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Authors

+ Senkader, S More by this author

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Author

+ Wilshaw, P More by this author

Institution:

University of Oxford

Division:

MPLS

Department:

Materials

Role:

Author

+ Gambaro, D More by this author

Role:

Author

+ Falster, R More by this author

Role:

Author

Bibliographic Details

Publisher:: Scitec Publications Ltd.
Journal:: SOLID STATE PHENOMENA
Volume:: 70
Pages:: 321-326
Publication date:: 1999-01-01
ISSN:: 1012-0394

Item Description

Language:: English
Keywords:: silicon

Czochralski

oxygen

warpage

mechanical strength

dislocation
Pubs id:: pubs:6678
UUID:: uuid:39a9c275-39af-4343-adb1-8fb23203a183
Local pid:: pubs:6678
Source identifiers:: 6678
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1999

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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