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THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE

Abstract:

An analysis is made of the experimental parameters which can cause errors when EBIC measurements are used to investigate the recombination behaviour of defects. In the first part of the paper specimen effects such as the minority carrier diffusion length and depletion region width are considered. In the second an analysis is made of how EBIC signal measurements depend on the electrical properties of the collecting junction, the series resistance of the circuit and the size of the induced curr...

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Publication status:
Published

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Journal:
ULTRAMICROSCOPY
Volume:
31
Issue:
2
Pages:
177-182
Publication date:
1989-10-05
DOI:
ISSN:
0304-3991
URN:
uuid:393ab298-7dba-43b6-baf8-f1f5b09cb7f9
Source identifiers:
26041
Local pid:
pubs:26041
Language:
English

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