Defect mediated extraction in InAs/GaAs quantum dot solar cells

Journal article

Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to efficient carrier extraction. We present experimental evidence and a theoretical model to show that carrier extraction from InAs quantum dots is significantly enhanced by the presence of defects, w...

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Authors: Willis, S; Dimmock, J; Tutu, F; Liu, H; Peinado, MG

• Journal: Solar Energy Materials and Solar Cells
• Volume: 102
• Pages: 142-147
• Publication date: 2012-07-01
• DOI: 10.1016/j.solmat.2012.03.010
• ISSN: 0927-0248
• Language: English
• Keywords: Defect; Quantum dot solar cells; Carrier escape