Journal article
High carrier mobility in polycrystalline thin film diamond
- Abstract:
-
Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 1017-1019cm-3 have been measured; control over the carrier concentration can be achieved by annealing the "as-grown" films in air. For a given annealing temperature a stable carrier concentration arises. The Ha...
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- Publication status:
- Published
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- Publisher copy:
- 10.1063/1.120734
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Authors
Bibliographic Details
- Journal:
- APPLIED PHYSICS LETTERS
- Volume:
- 72
- Issue:
- 3
- Pages:
- 353-355
- Publication date:
- 1998-01-19
- DOI:
- ISSN:
-
0003-6951
- Source identifiers:
-
36344
Item Description
- Language:
- English
- Pubs id:
-
pubs:36344
- UUID:
-
uuid:36e96f73-cce4-4d41-b7d4-9ad1ea1d497a
- Local pid:
- pubs:36344
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 1998
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