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High carrier mobility in polycrystalline thin film diamond

Abstract:

Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 1017-1019cm-3 have been measured; control over the carrier concentration can be achieved by annealing the "as-grown" films in air. For a given annealing temperature a stable carrier concentration arises. The Ha...

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Publication status:
Published

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Publisher copy:
10.1063/1.120734

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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Role:
Author
Journal:
APPLIED PHYSICS LETTERS
Volume:
72
Issue:
3
Pages:
353-355
Publication date:
1998-01-19
DOI:
ISSN:
0003-6951
URN:
uuid:36e96f73-cce4-4d41-b7d4-9ad1ea1d497a
Source identifiers:
36344
Local pid:
pubs:36344
Language:
English

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