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Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon

Abstract:

The production of dislocations by boron or silicon ion implantation followed by a short, high temperature anneal is found to greatly enhance near-band edge cathodoluminescence at room temperature. A strong luminescence peak at similar to 1154nm is observed. This luminescence is independent of the presence of a p-n junction and persists if the dislocations are removed by chemical etching at room temperature. We propose that the enhanced luminescence is due to the dislocations acting as getteri...

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Publication status:
Published

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Volume:
107
Pages:
355-358
Publication date:
2005-01-01
ISSN:
0930-8989
URN:
uuid:3648a925-c902-4a1d-b460-53877fbedaef
Source identifiers:
16461
Local pid:
pubs:16461
ISBN:
3-540-31914-X

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