Conference item
Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
- Abstract:
-
The production of dislocations by boron or silicon ion implantation followed by a short, high temperature anneal is found to greatly enhance near-band edge cathodoluminescence at room temperature. A strong luminescence peak at similar to 1154nm is observed. This luminescence is independent of the presence of a p-n junction and persists if the dislocations are removed by chemical etching at room temperature. We propose that the enhanced luminescence is due to the dislocations acting as getteri...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- Microscopy of Semiconducting Materials
- Volume:
- 107
- Pages:
- 355-358
- Publication date:
- 2005-01-01
- Event title:
- 14th Conference on Microscopy of Semiconducting Materials
- ISSN:
-
0930-8989
- Source identifiers:
-
16461
- ISBN:
- 354031914X
Item Description
- Keywords:
- Pubs id:
-
pubs:16461
- UUID:
-
uuid:3648a925-c902-4a1d-b460-53877fbedaef
- Local pid:
- pubs:16461
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2005
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