Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon

Stowe, DJ; Fraser, KJ; Galloway, SA; Senkader, S; Falster, RJ; Wilshaw, PR

Abstract:

The production of dislocations by boron or silicon ion implantation followed by a short, high temperature anneal is found to greatly enhance near-band edge cathodoluminescence at room temperature. A strong luminescence peak at similar to 1154nm is observed. This luminescence is independent of the presence of a p-n junction and persists if the dislocations are removed by chemical etching at room temperature. We propose that the enhanced luminescence is due to the dislocations acting as getteri...

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APA Style

Stowe, D. J., Fraser, K. J., Galloway, S. A., Senkader, S., Falster, R. J., & Wilshaw, P. R. (2005). Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon. 107, 355–358.

MLA Style

Stowe, D. J., et al. Efficient, Room-Temperature, near-Band Gap Luminescence by Gettering in Ion Implanted Silicon. 2005, pp. 355–58.

Chicago Style

Stowe, DJ, KJ Fraser, SA Galloway, S Senkader, RJ Falster, and PR Wilshaw. 2005. “Efficient, Room-Temperature, near-Band Gap Luminescence by Gettering in Ion Implanted Silicon.” In , 107:355–58.
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