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Vertical transport through n-As/p-GaSb heterojunctions at high pressures and magnetic fields

Abstract:

The conduction band of InAs lies lower in energy than the GaSb valence band. In order to preserve continuity of the Fermi level across the interface, charge transfer takes place resulting in a confined quasi two dimensional electron gas (2DEG) in the InAs and a confined quasi two dimensional hole gas (2DHG) in the GaSb.

This study is an investigation into the vertical transport in an n-InAs/p-GaSb single heterojunction (SHET). Application of a forward bias (InAs n...

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Institution:
University of Oxford
Department:
Faculty of Physical Sciences
Role:
Author
Publication date:
1999
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Barcode:
603847105
URN:
uuid:355f36e2-cae2-4dad-8639-ed9f618c98ea
Local pid:
td:603847105

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