Thesis
Vertical transport through n-As/p-GaSb heterojunctions at high pressures and magnetic fields
- Abstract:
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The conduction band of InAs lies lower in energy than the GaSb valence band. In order to preserve continuity of the Fermi level across the interface, charge transfer takes place resulting in a confined quasi two dimensional electron gas (2DEG) in the InAs and a confined quasi two dimensional hole gas (2DHG) in the GaSb.
This study is an investigation into the vertical transport in an n-InAs/p-GaSb single heterojunction (SHET). Application of a forward bias (InAs n...
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Authors
Bibliographic Details
- Publication date:
- 1999
- Type of award:
- DPhil
- Level of award:
- Doctoral
- Awarding institution:
- University of Oxford
- URN:
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uuid:355f36e2-cae2-4dad-8639-ed9f618c98ea
- Local pid:
- td:603847105
Item Description
- Language:
- English
- Subjects:
Terms of use
- Copyright holder:
- Chaudhry, Wahid
- Copyright date:
- 1999
- Notes:
- The digital copy of this thesis has been made available thanks to the generosity of Dr Leonard Polonsky
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