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Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission - art. no. 61180K

Abstract:

We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As+ ions, and InGaAs and InP with Fe+ ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to mod...

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Publication status:
Published

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Publisher copy:
10.1117/12.644074

Authors


Lloyd-Hughes, J More by this author
Castro-Camus, E More by this author
Fraser, MD More by this author
Jagadish, C More by this author
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Volume:
6118
Pages:
K1180-K1180
Publication date:
2006
DOI:
ISSN:
0277-786X
URN:
uuid:33c8ad54-10fe-4b58-8693-4f514b39d1c9
Source identifiers:
25703
Local pid:
pubs:25703
ISBN:
0-8194-6160-1

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