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Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal

Abstract:

We have studied the growth of InGaN epitaxial layers on GaN by MOVPE (metal-organic vapour phase epitaxy), and have discovered that nanostructures may be formed if a flat epilayer is annealed in molecular nitrogen immediately after growth. The size and density of the nanostructures are shown to be dependent on the growth/anneal temperature. We demonstrated the quantum dot nature of our nanostructures by performing spatially resolved photoluminescence on samples that had been capped with a lay...

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Publication status:
Published

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Publisher copy:
10.1002/pssc.200303264

Authors


Oliver, RA More by this author
Kappers, MJ More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Volume:
0
Issue:
7
Pages:
2515-2519
Publication date:
2003
DOI:
EISSN:
1610-1642
ISSN:
1862-6351
URN:
uuid:31eafc12-bb39-4dca-ab11-1e6d208163c7
Source identifiers:
24911
Local pid:
pubs:24911
ISBN:
3-527-40489-9
Keywords:

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