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Selective etching of epitaxial MnAs films on GaAs(001): Influence of structure and strain

Abstract:

Strain in epitaxial MnAs thin films on GaAs(001) substrates plays an important role in the coupled magnetostructural phase transition. As a result of strain, the phase transition from the ferromagnetic α phase to the paramagnetic Β phase proceeds over a wide temperature range and the coexisting phases form a periodic stripe array. Employing suitable wet chemical etchants, the two MnAs phases can be etched selectively. Perpendicular to the α-Β -stripe structure, the built-up strain relaxes in ...

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Publication status:
Published

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Publisher copy:
10.1063/1.1954888

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
98
Issue:
1
Pages:
013907-013907
Publication date:
2005-07-01
DOI:
ISSN:
0021-8979
Source identifiers:
151470
Language:
English
Pubs id:
pubs:151470
UUID:
uuid:319b26cf-1d67-4bc7-8ce3-f9f969e98ca8
Local pid:
pubs:151470
Deposit date:
2012-12-19

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