- Band-gap states in V-doped TiO2 have been studied by photoemission spectroscopy over a range of photon energies encompassing the Ti 3p and V 3p core thresholds. The states show resonant enhancement at photon energies significantly higher than found for Ti 3d states introduced into TiO2 by oxygen deficiency or alkali-metal adsorbates. This demonstrates that the gap states relate to electrons trapped on dopant V cations rather than host Ti cations.
- Publication status:
- Peer review status:
- Peer reviewed
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- Copyright holder:
- The American Physical Society
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- Citation: Morris, D. et al. (1997). 'Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission', Physical Review B, 55(24), 16083 -16087. [Available at http://prb.aps.org/]. © 1997 The American Physical Society.