Journal article
Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission
- Abstract:
- Band-gap states in V-doped TiO2 have been studied by photoemission spectroscopy over a range of photon energies encompassing the Ti 3p and V 3p core thresholds. The states show resonant enhancement at photon energies significantly higher than found for Ti 3d states introduced into TiO2 by oxygen deficiency or alkali-metal adsorbates. This demonstrates that the gap states relate to electrons trapped on dopant V cations rather than host Ti cations.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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Authors
Bibliographic Details
- Publisher:
- American Physical Society
- Journal:
- Physical Review B More from this journal
- Volume:
- 55
- Issue:
- 24
- Pages:
- 16083 -16087
- Publication date:
- 1997-06-01
- EISSN:
-
1550-235x
- ISSN:
-
1098-0211
Item Description
- Language:
-
English
- Keywords:
- Subjects:
- UUID:
-
uuid:30f7e80c-b7f0-4992-9479-9c7a82ffe84e
- Local pid:
-
ora:1421
- Deposit date:
-
2008-03-14
Terms of use
- Copyright holder:
- The American Physical Society
- Copyright date:
- 1997
- Notes:
- Citation: Morris, D. et al. (1997). 'Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission', Physical Review B, 55(24), 16083 -16087. [Available at http://prb.aps.org/]. © 1997 The American Physical Society.
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