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3D-to-1D carrier scattering in GaAs V-groove quantum wires

Abstract:

Epitaxial growth on nonplanar substrates is an attractive method for producing high quality quantum wire structures for applications in low-threshold lasers. However, a crucial factor in this application is the transfer of carriers between extended (3D) three-dimensional and confined (1D) one-dimensional states. In this paper we present a joint theoretical and experimental investigation of 3D-to-1D scattering in GaAs V-groove quantum wires confined either, within GaAs/AlAs short-period superl...

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Publication status:
Published

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Journal:
SOLID-STATE ELECTRONICS
Volume:
40
Issue:
1-8
Pages:
257-260
Publication date:
1996-01-01
Event title:
7th International Conference on Modulated Semiconductor Structures (MSS-7)
DOI:
ISSN:
0038-1101
Source identifiers:
10180
Keywords:
Pubs id:
pubs:10180
UUID:
uuid:2ea7fe01-9242-42e7-ad72-40738d898e90
Local pid:
pubs:10180
Deposit date:
2012-12-19

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