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Journal article

Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy

Publication status:
Published

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Publisher copy:
10.1063/1.122929

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Journal:
APPLIED PHYSICS LETTERS
Volume:
73
Issue:
26
Pages:
3899-3901
Publication date:
1998-12-28
DOI:
ISSN:
0003-6951
URN:
uuid:2e8aa5d6-645b-4542-96e2-eecbf472d6ec
Source identifiers:
31311
Local pid:
pubs:31311

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