Journal article
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
- Publication status:
- Published
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Authors
- Journal:
- APPLIED PHYSICS LETTERS More from this journal
- Volume:
- 73
- Issue:
- 26
- Pages:
- 3899-3901
- Publication date:
- 1998-12-28
- DOI:
- ISSN:
-
0003-6951
- Pubs id:
-
pubs:31311
- UUID:
-
uuid:2e8aa5d6-645b-4542-96e2-eecbf472d6ec
- Local pid:
-
pubs:31311
- Source identifiers:
-
31311
- Deposit date:
-
2012-12-19
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- Copyright date:
- 1998
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