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Observation of a level crossing in a molecular nanomagnet using implanted muons.

Abstract:

We have observed an electronic energy level crossing in a molecular nanomagnet (MNM) using muon spin relaxation. This effect, not observed previously despite several muon studies of MNM systems, provides further evidence that the spin relaxation of the implanted muon is sensitive to the dynamics of the electronic spin. Our measurements on a broken ring MNM [H(2)N(t)Bu(is)Pr][Cr(8)CdF(9)(O(2)CC(CH(3))(3))(18)], which contains eight Cr ions, show clear evidence for the S = 0 --> S = 1 transi...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics, REF-Physics
Möller, JS More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Journal:
Journal of physics. Condensed matter : an Institute of Physics journal
Volume:
23
Issue:
24
Pages:
242201
Publication date:
2011-06-05
DOI:
EISSN:
1361-648X
ISSN:
0953-8984
URN:
uuid:2e174efc-cedc-4319-82ae-becccccd7b82
Source identifiers:
141740
Local pid:
pubs:141740

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