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Dislocations in semiconductors

Abstract:

A set of codes with 3D periodic boundary conditions has been developed to model dislocations in semiconductors. Several schemes have been used to investigate the atomic structure of dislocations; classical potentials incorporated in a Molecular Dynamics framework, a tightbinding k-space scheme and ab initio pseudopotential codes developed at Cambridge and Edinburgh.

An error has been detected in previous work that modelled dislocations using periodic boundary conditions. It is demo...

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Institution:
University of Oxford
Department:
Mathematical and Physical Sciences Division
Role:
Author

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Role:
Supervisor
Role:
Supervisor
Publication date:
1992
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Barcode:
602836675
URN:
uuid:2be9288d-caee-4070-b535-b8fc6406b4d1
Local pid:
td:602836675
Language:
English
Subjects:

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