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The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

Abstract:

We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron Diffraction (RHEED), and we compare the results with previously reported measurements on Metalorganic Vapour Phase Epitaxy (MOVPE) grown structures. The resonance, which does not conserve in-plane momentum, ...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Klipstein, PC More by this author
Austing, DG More by this author
Journal:
Journal of Physics and Chemistry of Solids
Volume:
56
Issue:
3-4
Pages:
475-479
Publication date:
1995-03-05
ISSN:
0022-3697
URN:
uuid:2b9d0f58-2eea-4bd9-8a32-871e4651b46f
Source identifiers:
134145
Local pid:
pubs:134145

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