Conference icon

Conference

The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices

Abstract:
Epitaxial Tl-2212 films have been grown on LaAlO3, MgO and ceria-buffered R-plane sapphire using an ex-situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. Films grown on LaAlO3 have T-c's of 101 - 105.5K, large-area J(c)'s of up to 2x10(5) Acm(-2) and surface resistances (R(3)) as low as 3.7m Ohm (80K, 10GHz). TEM and HREM show the films to be well-aligned and relatively fault-free. Films grown on ceria-buffered R-plane sapphire have T-c's up to 100.5K and large-area J(c)'s up to 1x10(5) Acm(-2).
Publication status:
Published

Actions


Authors


OConnor, JD More by this author
Bramley, AP More by this author
Morley, SM More by this author
Jenkins, AP More by this author
Expand authors...
Volume:
148
Pages:
1055-1058
Publication date:
1995
ISSN:
0951-3248
URN:
uuid:2b50489b-00db-44ff-9d86-5462dde572f7
Source identifiers:
28151
Local pid:
pubs:28151
ISBN:
0-7503-0348-4

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP