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Generation of dislocation glide loops in Czochralski silicon

Abstract:

Critical stresses necessary to generate dislocation glide loops in Czochralski silicon containing oxide precipitates have been investigated. Using three-point bending and etching techniques, it was possible to determine the minimum shear stress required to generate dislocation glide loops from controlled distribution of precipitates under constant-stress conditions. The generation of glide dislocations was investigated in samples with different oxide precipitate sizes and different numbers of...

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Publication status:
Published

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Publisher copy:
10.1088/0953-8984/14/48/341

Authors


Giannattasio, A More by this author
Senkader, S More by this author
Falster, RJ More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Volume:
14
Issue:
48
Pages:
12981-12987
Publication date:
2002-12-16
DOI:
ISSN:
0953-8984
URN:
uuid:2ade8cdf-f10a-421c-9c89-ea9408b45fdc
Source identifiers:
23351
Local pid:
pubs:23351
Keywords:

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