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Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Abstract:

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity bro...

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Publisher copy:
10.1021/nl403299u

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
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Journal:
Nano Letters
Volume:
14
Issue:
1
Pages:
94-100
Publication date:
2014-01-08
DOI:
EISSN:
1530-6992
ISSN:
1530-6984
Source identifiers:
448496
Language:
English
Keywords:
Pubs id:
pubs:448496
UUID:
uuid:2ace0305-6b22-41de-b849-aa3d061068c9
Local pid:
pubs:448496
Deposit date:
2014-02-14

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