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Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals

Abstract:

We present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wide range of Hall mobility and carrier concentration values with either a net electron or hole carrier type. The synthetic niobium-doped molybdenum disulfide crystal exhibits a net hole carrier type...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1109/ULIS.2017.7962592

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
ORCID:
0000-0003-1512-2046
Publisher:
Institute of Electrical and Electronics Engineers
Host title:
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Pages:
27-30
Publication date:
2017-07-03
Acceptance date:
2017-04-02
Event title:
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS)
Event location:
Athens, Greece
Event website:
http://eurosoi-ulis2017.inn.demokritos.gr/index.php
Event start date:
2017-04-03
Event end date:
2017-04-05
DOI:
EISSN:
2472-9132
EISBN:
9781509053131
ISBN:
9781509053148

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