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Taper-Free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process

Abstract:

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature....

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Publication status:
Published

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Publisher copy:
10.1021/cg2008914

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Journal:
CRYSTAL GROWTH and DESIGN
Volume:
12
Issue:
1
Pages:
135-141
Publication date:
2012-01-05
DOI:
EISSN:
1528-7505
ISSN:
1528-7483
URN:
uuid:28f354d8-f2d7-427a-89ba-4f122d0b8bc4
Source identifiers:
245976
Local pid:
pubs:245976
Language:
English

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