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CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE

Abstract:
Capacitively coupled (CC) (r.f.) plasmas offer major advantages over microwave-induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed CC r.f. sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first complete diamond overlayer to be grown with CC r.f. is reported here, where a novel magnetically enhanced source with ring electrodes has been used. The potential of this technique for the growth of high quality diamond films is discussed. © 1995.
Publication status:
Published

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Authors


JACKMAN, R More by this author
BECKMAN, J More by this author
Volume:
29
Issue:
1-3
Pages:
216-219
Publication date:
1995-01-05
DOI:
ISSN:
0921-5107
URN:
uuid:27fc2c7a-f833-4889-b704-af485919ce65
Source identifiers:
44742
Local pid:
pubs:44742

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