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Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells

Abstract:

A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. A trial function assuming a Lorentzian line shape for the stripe length dependence of the gain is compared with t...

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Publisher copy:
10.1063/1.1421094

Authors


Taylor, RA More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Arakawa, Y More by this author
Journal:
Applied Physics Letters
Volume:
79
Issue:
21
Pages:
3434-3436
Publication date:
2001-11-19
DOI:
ISSN:
0003-6951
URN:
uuid:273f39eb-d378-420d-8212-a80592c14c41
Source identifiers:
134721
Local pid:
pubs:134721
Language:
English

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