Journal article

OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

Abstract:: Plasmons at the interface between heavily-doped MBE grown n-type GaAs (n ≅ 4 × 1018 cm-3) and a surface depletion layer about 200 Å thick have been observed by HREELS. The variation of the plasmon frequency and intensity with exciting beam energy are discussed within the framework of a simple two layer model. © 1986.

Publication status:: Published

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APA Style

Graygrychowski, Z., Stradling, R., Egdell, R., Dobson, P., Joyce, B., & Woodbridge, K. (1986). OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY. SOLID STATE COMMUNICATIONS, 59(10), 703–706.

MLA Style

Graygrychowski, Z., et al. “OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY.” SOLID STATE COMMUNICATIONS, vol. 59, no. 10, 1986, pp. 703–06.

Chicago Style

Graygrychowski, Z, R Stradling, R Egdell, P Dobson, B Joyce, and K Woodbridge. 1986. “OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY.” SOLID STATE COMMUNICATIONS 59 (10): 703–6.
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Publisher copy:: 10.1016/0038-1098(86)90378-9

Authors

+ Graygrychowski, Z More by this author

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+ Stradling, R More by this author

Role:: Author

+ Egdell, R More by this author

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+ Dobson, P More by this author

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+ Joyce, B More by this author

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Journal:: SOLID STATE COMMUNICATIONS More from this journal
Volume:: 59
Issue:: 10
Pages:: 703-706
Publication date:: 1986-09-01
DOI:: 10.1016/0038-1098(86)90378-9
ISSN:: 0038-1098

Language:: English
Pubs id:: pubs:42530
UUID:: uuid:25f88449-e958-4b4e-b5e2-9c8f80b69f35
Local pid:: pubs:42530
Source identifiers:: 42530
Deposit date:: 2012-12-19

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Copyright date:: 1986

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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