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Breakdown of the quantum Hall effect in graphene

Abstract:
We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard. © 2012 IEEE.

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Publisher copy:
10.1109/CPEM.2012.6251027

Authors


Janssen, TJBM More by this author
Tzalenchuk, A More by this author
Baker, AMR More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford
Nicholas, RJ More by this author
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Journal:
CPEM Digest (Conference on Precision Electromagnetic Measurements)
Pages:
510-511
Publication date:
2012
DOI:
ISSN:
0589-1485
URN:
uuid:25da0484-9f4a-4585-b63a-c9251e3ec429
Source identifiers:
355203
Local pid:
pubs:355203

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