Journal article icon

Journal article

Breakdown of the quantum Hall effect in graphene

Abstract:
We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard. © 2012 IEEE.

Actions


Access Document


Publisher copy:
10.1109/CPEM.2012.6251027

Authors


More by this author
Institution:
University of Oxford
Department:
Oxford
Role:
Author
Expand authors...
Journal:
CPEM Digest (Conference on Precision Electromagnetic Measurements)
Pages:
510-511
Publication date:
2012-01-01
DOI:
ISSN:
0589-1485
URN:
uuid:25da0484-9f4a-4585-b63a-c9251e3ec429
Source identifiers:
355203
Local pid:
pubs:355203

Terms of use


Metrics


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP