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Evolution of wurtzite structured GaAs shells around InAs nanowire cores

Abstract:
GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given. © to the authors 2009.

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Publisher copy:
10.1007/s11671-009-9326-6

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics
Role:
Author
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Journal:
Nanoscale Research Letters
Volume:
4
Issue:
8
Pages:
846-849
Publication date:
2009-01-01
DOI:
EISSN:
1556-276X
ISSN:
1931-7573
URN:
uuid:25aeaada-4b13-45fa-82c6-a76c40299275
Source identifiers:
172734
Local pid:
pubs:172734

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