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Highly conductive In4Sn3O12 films prepared by pulsed laser deposition

Abstract:
Highly conductive (> 103 Ω-1cm-1) and transparent (∼ 90%) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass substrates held at a temperature of 500°C under varying pressures of oxygen (2.5 mTorr ≤ PO2 ≤ 15 mTorr). The crystallinity and the roughness of the films were found to increase with the pressure of oxygen used during deposition. Electron concentrations of the order of 5×1020 cm-3 and mobilities as high as 30 cm2V-1s-1 were derived from the measurement of Hall cosfficients. Both the electronic transport and optical properties of the films were found to be strongly sensitive to the pressure of oxygen used during deposition. © 2008 Materials Research Society.

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Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Role:
Author


Journal:
Materials Research Society Symposium Proceedings More from this journal
Volume:
1102
Pages:
66-72
Publication date:
2008-01-01
ISSN:
0272-9172


Language:
English
Pubs id:
pubs:118953
UUID:
uuid:251de967-d27e-4476-b3fc-21df4cb3d1e9
Local pid:
pubs:118953
Source identifiers:
118953
Deposit date:
2012-12-19

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