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Highly conductive In4Sn3O12 films prepared by pulsed laser deposition

Abstract:

Highly conductive (> 103 Ω-1cm-1) and transparent (∼ 90%) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass substrates held at a temperature of 500°C under varying pressures of oxygen (2.5 mTorr ≤ PO2 ≤ 15 mTorr). The crystallinity and the roughness of the films were found to increase with the pressure of oxygen used during deposition. Electron concentrations of the order of 5×1020 cm-3 and mobilities as high as 30 cm2V-1s-1 were derived from the measurement ...

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Authors


O'Neil, DH More by this author
Kuznetsov, V More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Journal:
Materials Research Society Symposium Proceedings
Volume:
1102
Pages:
66-72
Publication date:
2008
ISSN:
0272-9172
URN:
uuid:251de967-d27e-4476-b3fc-21df4cb3d1e9
Source identifiers:
118953
Local pid:
pubs:118953
Language:
English

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