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Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

Abstract:

We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based ...

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Publisher copy:
10.1149/1.2819536

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Journal:
Electrochemical and Solid-State Letters
Volume:
11
Issue:
2
Pages:
H36-H36
Publication date:
2008-01-01
DOI:
ISSN:
1099-0062
URN:
uuid:24d64591-fd42-45ea-8706-48c09cf46e94
Source identifiers:
389117
Local pid:
pubs:389117
Language:
English

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