Journal article icon

Journal article

Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs) n quantum wire structures

Abstract:
Raman spectroscopy has been used to measure phonons in GaAs v-groove quantum wire structures containing (001) and (111) GaAs/AlAs superlattice barrier regions. Resonance enhancement permits the identification of modes in different regions of the structure, and the measured phonon frequencies provide structural information which shows clear evidence of GaAs migration during growth from (001) surfaces into the grooves. Confined and interface phonons with large in-(111) plane wavevectors are observed. © 1996 American Institute of Physics.

Actions


Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
Applied Physics Letters More from this journal
Pages:
1519-1519
Publication date:
1995-01-01
ISSN:
0003-6951
Language:
English
Pubs id:
pubs:321832
UUID:
uuid:245286f7-859c-4771-90ea-d2a9378561e1
Local pid:
pubs:321832
Source identifiers:
321832
Deposit date:
2013-02-20

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP