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The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Abstract:

The influence of Sn doping on the growth of In2 O3 on Y-stabilized ZrO2 (100) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range of substrate temperatures between 650 and 900 °C. The extent of dopant incorporation under a constant Sn flux decreases monotonically with increasing substrate temperature, although the n -type carrier concentration in "overdoped" films grown at 650 °C is lower than in films with a lower Sn concentration grown at 750 °C. The small in...

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Publication status:
Published

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Publisher copy:
10.1063/1.3153966

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Journal:
JOURNAL OF APPLIED PHYSICS More from this journal
Volume:
106
Issue:
1
Pages:
013703-013703
Publication date:
2009-07-01
DOI:
ISSN:
0021-8979

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