Journal article icon

Journal article

Towards predictive many-body calculations of phonon-limited carrier mobilities in semiconductors

Abstract:

We probe the accuracy limit of ab initio calculations of carrier mobilities in semiconductors, within the framework of the Boltzmann transport equation. By focusing on the paradigmatic case of silicon, we show that fully predictive calculations of electron and hole mobilities require many-body quasiparticle corrections to band structures and electron-phonon matrix elements, the inclusion of spin-orbit coupling, and an extremely fine sampling of inelastic scattering processes in momentum space...

Expand abstract
Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted manuscript

Actions


Access Document


Files:
Publisher copy:
10.1103/PhysRevB.97.121201

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Margine, ER More by this author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Oxford college:
Wolfson College
National Science Foundation More from this funder
Publisher:
American Physical Society Publisher's website
Journal:
Physical Review B Journal website
Volume:
97
Issue:
12
Pages:
121201
Publication date:
2018-03-27
Acceptance date:
2018-03-06
DOI:
EISSN:
2469-9969
ISSN:
2469-9950
Pubs id:
pubs:835138
URN:
uri:23975285-252f-413a-9944-a2cb70b2cb6e
UUID:
uuid:23975285-252f-413a-9944-a2cb70b2cb6e
Local pid:
pubs:835138
Keywords:

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP