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COMPARATIVE-STUDIES OF THE THERMAL-DECOMPOSITION OF TRITERTIARYBUTYLGALLIUM AND TRI-ISOBUTYLGALLIUM ON GAAS(100)

Abstract:

The adsorption of tritertiarybutylgallium (TTBG) and tri-isobutylgallium (TIBG) on GaAs(100), and on In and Al doped GaAs(100) surfaces, has been investigated using AES, HREELS and thermal desorption techniques. Both TTBG and TIBG adsorb with high sticking probability on the GaAs surface at 300 K to form adsorbed phases in which the alkyl groups retain their integrity, as indicated by HREELS. Heating of both adsorbed phases results in competing reactions, in which some of the adlayer dissocia...

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Publication status:
Published

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Authors


FITZGERALD, E More by this author
Journal:
SURFACE SCIENCE
Volume:
278
Issue:
1-2
Pages:
111-120
Publication date:
1992-11-01
DOI:
ISSN:
0039-6028
URN:
uuid:2386670b-6b8f-48f4-bb57-ef239a481e51
Source identifiers:
43955
Local pid:
pubs:43955
Language:
English

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