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Conference item

Application of surface relaxation effect to the measurement of built in strain in semiconductor heterostructures

Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
ELECTRON MICROSCOPY 1994, VOL 1 More from this journal
Pages:
905-906
Publication date:
1994-01-01
Event title:
13th International Congress on Electron Microscopy
ISBN:
2868832253
Pubs id:
pubs:23455
UUID:
uuid:2225adac-6dcd-4312-b64c-c29a1abbbc58
Local pid:
pubs:23455
Source identifiers:
23455
Deposit date:
2012-12-19

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