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Application of surface relaxation effect to the measurement of built in strain in semiconductor heterostructures

Publication status:
Published

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Authors


ANDERSON, S More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
SIKORSKI, A More by this author
VAUGHAN, M More by this author
Pages:
905-906
Publication date:
1994
URN:
uuid:2225adac-6dcd-4312-b64c-c29a1abbbc58
Source identifiers:
23455
Local pid:
pubs:23455
ISBN:
2-86883-225-3

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