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Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.

Abstract:

Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the <111> direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH(3) (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate h...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
Journal:
Nanotechnology More from this journal
Volume:
23
Issue:
41
Pages:
415702
Publication date:
2012-10-01
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
Language:
English
Pubs id:
pubs:354040
UUID:
uuid:21ef6ef7-0a1c-469f-a912-67ade7b5a75a
Local pid:
pubs:354040
Source identifiers:
354040
Deposit date:
2013-11-16

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