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CLASSICAL TRAJECTORY CALCULATIONS OF NONLINEAR SPUTTERING - SICL4 SPUTTERING OF A CU(001) SURFACE USING ABINITIO POTENTIALS

Abstract:

Classical trajectory calculations are carried out on SiCl4 sputtering of a Cu(001) surface. The repulsive Cu{single bond}Si and Cu{single bond}Cl interaction potentials are calculated using ab initio electronic structure theory. At energies of 120 eV or greater, the calculated sputtering yields are found to be greater than the sum of the component atomic sputtering yields. This effect cannot be explained by a thermal spike such as has been invoked to explain nonlinear sputtering at higher ene...

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Publication status:
Published

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Authors


BROOMFIELD, K More by this author
STANSFIELD, R More by this author
Journal:
SURFACE SCIENCE
Volume:
227
Issue:
3
Pages:
369-389
Publication date:
1990-03-05
DOI:
ISSN:
0039-6028
URN:
uuid:21cf9262-e1c2-4fbd-bcee-cba7aa71f5b5
Source identifiers:
52861
Local pid:
pubs:52861
Language:
English

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