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Enhanced oxygen diffusion in highly doped p-type Czochralski silicon

Abstract:

The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon (Cz-Si) with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350-550 °C temperature range, and the stress required to bring about dislocation motion at 550 °C was then measured. This dislocation unlocking stress was found to increase with annealing time due to oxygen diffusion to the disloc...

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Publication status:
Published

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Publisher copy:
10.1063/1.2369536

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
JOURNAL OF APPLIED PHYSICS More from this journal
Volume:
100
Issue:
10
Pages:
103531-103531
Publication date:
2006-11-15
DOI:
ISSN:
0021-8979
Language:
English
Pubs id:
pubs:176458
UUID:
uuid:21b791ea-f1d5-4265-a641-049a347dc560
Local pid:
pubs:176458
Source identifiers:
176458
Deposit date:
2012-12-19

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